| PART |
Description |
Maker |
| HYS64V16302GU-8-C2 HYS64V16302GU HYS64V16302GU-75- |
3.3 V 16M × 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life
3.3 V 16M 64-Bit/ 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC
3.3 V 16M 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| AS4SD16M72PBG-10_ET AS4SD16M72PBG-10_IT AS4SD16M72 |
16M x 72, SDR SDRAM MCP
16M X 72 SYNCHRONOUS DRAM, PBGA219 PLASTIC, PBGA-219
|
http://
Austin Semiconductor, Inc
Micross Components
|
| HSD16M64F8V-F10 HSD16M64F8V-F12 HSD16M64F8V-F13 HS |
Synchronous DRAM Module, 128Mbyte ( 16M x 64-Bit ) SMM based on 16Mx8 4Banks, 4K Ref., 3.3V
Synchronous DRAM Module 128Mbyte (16Mx64bit), SMM ,16Mx8, 4Banks, 4K Ref. 3.3V
|
Hanbit Electronics Co.,Ltd
|
| MBM29LV017-12 MBM29LV017-90 MBM29LV017-90PBT MBM29 |
FLASH MEMORY 16M (2M x 8) BIT
CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
| IDT72T20128L10BBI IDT72T2098L10BBI IDT72T20128L6BB |
2.5 VOLT HIGH-SPEED TeraSyncDDR/SDR FIFO 20-BIT/10-BIT CONFIGURATION 2.5伏高速TeraSync⑩复特别提款权先进先0-BIT/10-BIT配置
|
Integrated Device Technology, Inc.
|
| MBM29LV016T-80PTN MBM29LV016T-80PTR MBM29LV016B-80 |
16M (2M x 8) BIT 2M X 8 FLASH 3V PROM, 120 ns, PDSO40
16M (2M x 8) BIT 2M X 8 FLASH 3V PROM, 90 ns, PDSO40
16M (2M x 8) BIT 2M X 8 FLASH 3V PROM, 80 ns, PDSO40
630 V driver IC for CFL and
|
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 |
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
16M x 72-Bit EDO-DRAM Module (ECC - Module)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
