| PART |
Description |
Maker |
| TPC8203 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3067 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3316 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8A03-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| HN1K06FU |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8105-H |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
|
Toshiba Semiconductor
Toshiba Corporation
|
| SSM3J328R-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
| SSM3J134TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
| 2SK3130 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ヰ-MOSV)
|
TOSHIBA[Toshiba Semiconductor]
|
