| PART |
Description |
Maker |
| CM400HG-66H |
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| CM200HG-130H |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM900HG-90H |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM1200HG-66H09 |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| CM600HB-90H |
Single IGBTMOD?/a> HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD HVIGBT 600 Amperes/4500 Volts
Single IGBTMODHVIGBT 600 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM900HB-90H |
Single IGBTMOD?/a> HVIGBT 900 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 900 Amperes/4500 Volts
Single IGBTMODHVIGBT 900 Amperes/4500 Volts
Single IGBTMOD HVIGBT 900 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM1800DY-34S |
Dual Half-Bridge IGBTMOD HVIGBT Series Module 1800 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| W83977AF |
W83977F with 3rd UART for IR
|
Winbond Electronics
|
