| PART |
Description |
Maker |
| HYM532210ATEG-70 HYM532210ASLTE-70 HYM532210ATE-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Atmel, Corp.
TE Connectivity, Ltd.
|
| HB56TW432D-7L HB56TW433D-6 HB56TW433D-7 HB56TW433D |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
BRILLIANCE SEMICONDUCTOR, Inc.
TE Connectivity, Ltd.
|
| HB56G232B-6 HB56G132B-6 HB56G232B-6L |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Bourns, Inc.
|
| IBM11S1320BLB-70 IBM11S1320BNA-60 IBM11S1320BNA-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
TE Connectivity, Ltd.
Vishay Intertechnology, Inc.
|
| IBM11S2325LP-6RT IBM11S1325LP-70T IBM11S1325LP-6RT |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
Abracon, Corp.
|
| MH8M36CNJ-6 MH4M365CXJ-6 MH16M36BJ-6 |
8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 SIMM-72
4M X 36 MULTI DEVICE DRAM MODULE, 60 ns, DMA72
16M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
|
Qimonda AG
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| MT9LD272G-7S MT9LDT272G-7 MT9LDT272G-7XS MT9LD272G |
x72 Fast Page Mode DRAM Module
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Unisonic Technologies Co., Ltd.
|
| AS4C4M4F0-50JC AS4C4M4F0-50JI AS4C4M4F0-50TC AS4C4 |
x4 Fast Page Mode DRAM
5V 4M x 4 CMOS DRAM (Fast Page mode) 5V米4的CMOS的DRAM（快速页模式
|
Alliance Semiconductor, Corp.
|
| HYM59256AM-80 |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
|
Cypress Semiconductor, Corp.
|
| HYM591600LM-60 HYM591600LM-70 HYM591600LM-80 HYM59 |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
x(8 1) Fast Page Mode DRAM Module × 1）快速页面模式内存模
|
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
|
