| PART |
Description |
Maker |
| IRFP460 |
N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源击穿电00V,导通电.27Ω的N沟道增强MegaMOS功率MOSFET) 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源击穿电00V,导通电.27Ω的N沟道增强B>MegaMOS功率MOSFET)
MegaMOS - Power MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXTM12N90 IXTH12N90 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.90Ω的N沟道增强B>MegaMOSFET)
MEGAMOS FET
Discrete MOSFETs: Standard N-channel Types
|
IXYS Corporation
|
| IXTH10N100 |
(IXTH10N100 / IXTH12N100) MegaMOS FET
|
IXYS Corporation
|
| PSMN4R4-80PS |
N-channel 80 V, 4.1 m惟 standard level FET
N-channel 80 V, 4.1 m standard level FET 100 A, 80 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 80 V, 4.1 mΩ standard level FET
|
NXP Semiconductors N.V.
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| BUK9Y19-55B |
N-channel TrenchMOSlogic level FET
N-channel TrenchMOS⑩ logic level FET
N-channel Trenchmos (tm) logic level FET
|
PHILIPS[Philips Semiconductors]
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK823 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp.
NEC[NEC]
|
| SFR9024 SFU9024 SFS9520 SFR9024TF SFR9024TM SFU902 |
Avalanche Rugged Technology
Advanced Power MOSFET
60V P-Channel A-FET / Substitute of IRFR9024
60V P-Channel A-FET / Substitute of IRFU9024
|
FAIRCHILD[Fairchild Semiconductor]
|
| 4AJ11 |
Silicon P-Channel Power MOS FET Array
FET Arrays
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
