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CY7C1165V18 - 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

CY7C1165V18_465178.PDF Datasheet

Part No.

CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY7C1161V18-300BZI CY7C1161V18-333BZI CY7C1163V18-300BZI CY7C1163V18-300BZC CY7C1165V18-300BZXC CY7C1165V18-333BZXC CY7C1165V18-333BZC CY7C1165V18-333BZI CY7C1165V18-333BZXI CY7C1165V18-300BZI CY7C1165V18-300BZC CY7C1165V18-300BZXI CY7C1163V18-333BZI CY7C1176V18-333BZXI CY7C1176V18-300BZXI CY7C1176V18-300BZC CY7C1163V18-300BZXC

Description

18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

File Size

949.91K / 29 Page

Maker

Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.

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Part: CY7C1165V18-400BZXC

Maker: Cypress Semiconductor Corp

Pack: ETC

Stock: Reserved

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Full text search : 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

Product Description search : 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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