PART |
Description |
Maker |
SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
sirenza.com
|
SLD-1000 |
4 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com SIRENZA[SIRENZA MICRODEVICES]
|
0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies UHV240-KH/AS PTSA 0.5/ 9-2.5-Z Discrete POWER & Signal Technologies 分立功率 1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器(功500瓦的瞬变电压抑制器) 1500 Watt Transient Voltage Suppressors(???500???????靛?????? Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp. http://
|
AN1226 |
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
|
SGS Thomson Microelectronics
|
TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-10-15 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
SSM6E03TU |
Multi-chip discrete device (P-ch N-ch)
|
TOSHIBA
|
BLF573S BLF573 |
HF / VHF power LDMOS transistor A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
MPSW45_D MPSW45A ON2353 MPSW45 |
One Watt Darlington Transistors(NPN Silicon) *Motorola Preferred Device From old datasheet system
|
ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|