| PART |
Description |
Maker |
| BCV62C BCV62A BCV62B BCV62 |
?PNPSiliconDoubleTransistortobeusedasacurrentmirror?
TRANSISTOR|BJT|ARRAY|BLDGBLOCK|30VV(BR)CEO|100MAI(C)|SOT-143
PNP Silicon Double Transistor
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| M63826FP M63826GP M63826P M63826P/FP/GP |
Transistor Array
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| BCM846S07 |
NPN Silicon AF Transistor Array
|
Infineon Technologies AG
|
| SMBTA06U |
NPN Silicon AF Transistor Array
|
Infineon Technologies A...
|
| BC817U07 |
NPN Silicon AF Transistor Array
|
Infineon Technologies AG
|
| UPA1478 UPA1478H UPA1478H-AZ |
2 A, 35 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR SIP-10
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
Micrel Semiconductor, Inc.
NEC[NEC]
|
| BC847PN |
NPN/PNP Silicon AF Transistor Array
|
Infineon Technologies AG
|
| Q62702-C2373 BC857S BC857SQ62702C2373 |
TRANSISTOR SOT363
PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五（巴西）直| 5.5AI（四）|计划生育
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五（巴西）直| 8A条（丁）|计划生育
|
Mitsubishi Electric, Corp.
|
| BCR22PN07 |
NPN/PNP Silicon Digital Transistor Array
|
Infineon Technologies AG
|
| UPA2003C UPA2001C UPA2002C UPA2004C |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY
|
http://
NEC Electronics Corp
|
| UPA53C |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY
|
List of Unclassifed Manufacturers
ETC
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