| PART |
Description |
Maker |
| 28F008BV-T/B 28F008BE-T/B 28F800BV-T 28F800BV-B 28 |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
8-MBIT (512K X 16/ 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
|
Intel
|
| UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| CY62167DV20L CY62167DV20LL CY62167DV20LL-55BVI |
16-Mb (1024K x 16) Static RAM 1M X 16 STANDARD SRAM, 55 ns, PBGA48
16-Mb (1024K x 16) Static RAM 16 MB的（1024K × 16）静态RAM
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| M48T248Y-70PM1 M48T248V-70PM1TR M48T248Y-85PM1TR M |
RESONATR SAW DL 433.81/434.06MHZ
FILTER SAW 312.2MHZ REMOTE SMD
5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM
5.0 or 3.3V, 1024K TIMEKEEPER SRAM with PHANTOM 5.0.3V024K与幻象计时器的SRAM
|
意法半导
STMicroelectronics N.V.
|
| A29800 A29800UV-90 A29800UM-90 A29800TM-90 A29800T |
240 x 128 pixel format, LED or EL Backlight 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
PULSER PROBE 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Aerials (Antennas); Bandwidth Max:500MHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Dipole Antenna; Bandwidth Max:2.2GHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
240 x 128 pixel format, CFL Backlight with power harness
128 x 64 pixel format, LED Backlight available
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| 24AA1025-E/P 24FC1025-E/P 24LC1025-E/P 24AA1025-E/ |
1024K I2C CMOS Serial EEPROM
1024K I2CCMOS Serial EEPROM
1024K I2C?/a> CMOS Serial EEPROM
|
Microchip Technology Inc.
|
| DA28F016XS-15 DA28F016XS-20 E28F016XS-15 E28F016XS |
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels
|
Intel
|
| DA28F016SV-075 DA28F016SV-070 E28F016SV-075 E28F01 |
WSR2 0.04 Ohms 1% Tolerance
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 80 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 70 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 75 ns, PDSO56
|
Intel Corp.
Intel Corporation
Intel, Corp.
|
| F28F008SA-120 E28F008SA-120 E28F008SA-85 F28F008SA |
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 8兆（1兆位× 8FlashFileTM记忆
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 1M X 8 FLASH 12V PROM, 120 ns, PDSO44
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 1M X 8 FLASH 12V PROM, 85 ns, PDSO44
8-MBIT (1-MBIT x 8) FlashFile MEMORY
|
Intel, Corp.
Intel Corp.
Intel Corporation
|
| SST39VF-800A-554C-B3KE SST39VF-800A-554C-B3QE SST3 |
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Microchip Technology Inc.
Silicon Storage Technology, Inc
|
| DT28F016SA-100 E28F016SA-080 E28F016SA-150 DA28F01 |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY 1M X 16 FLASH 12V PROM, 70 ns, PDSO56
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY 1M X 16 FLASH 12V PROM, 80 ns, PDSO56
28F016SA 16-MBIT (1 MBIT X 16/ 2 MBIT X 8)FlashFile MEMORY
|
Intel, Corp.
Intel Corp.
Intel Corporation
|
