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CYD01S18V - FLEx18(TM) 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM

CYD01S18V_538512.PDF Datasheet


 Full text search : FLEx18(TM) 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM


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Cypress Semiconductor Corp.
CY7C0853V-133BBXI CY7C0852AV-167AXC CY7C0851AV-133 FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.0 to 3.6 V; Speed: 133 MHz 256K X 36 DUAL-PORT SRAM, 4.7 ns, PBGA172
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Cypress Semiconductor, Corp.
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CY7C0837AV CY7C0837AV-133BBC CY7C0837AV-133BBI CY7 FLEx18垄芒 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
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BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 EEPROM SRL 256X16 BIT
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
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EEPROM (256x8) 2K 1.8-6.0
EEPROM (512x8) 4k 1.8-6.0
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EEPROM (8kx8) 64K 1.8-6.0
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EEPROM (256x8) (128x16) 2K
8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC
EEPROM (128x8) 1k 2.5-6.0
EEPROM (8kx8) 64K 5V 90ns
EEPROM (32kx8) 256K 5V 150
EEPROM (32kx8) 256K 5V 120
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Omron Electronics, LLC
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
Intersil, Corp.
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
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Belden, Inc.
Rohm Co., Ltd.
Bourns, Inc.
NXP Semiconductors N.V.
Lattice Semiconductor, Corp.
Rectron Semiconductor
SIEMENS AG
Maxim Integrated Products, Inc.
Rochester Electronics, LLC
RF Solutions, Ltd.
Fujitsu, Ltd.
CYD01S18V CYD01S18V-133BBC CYD01S18V-133BBI CYD01S FLEx18⑩ 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
Cypress Semiconductor
ATMEGA1280 ATMEGA1280-16CU ATMEGA1280-16CUR ATMEGA 8-bit Atmel Microcontroller with 64K 128K 256K Bytes In-System Programmable Flash
ATMEL Corporation
GS840E18 GS840E36B-166I GS840E18B-166I GS840E32T-1 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8.5 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器))
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GSI Technology, Inc.
GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器))
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GSI Technology
E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B 5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8)启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
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Intel, Corp.
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Intel Corp.
Intel Corporation
UPD42505C-75 UPD42505V-50H UPD42505C-75H FLEx36&#153; 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM 线存储器
Field/Frame/Line Memory 线存储器
HIROSE ELECTRIC Co., Ltd.
SUSUMU Co., Ltd.
 
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