| PART |
Description |
Maker |
| DS1870_06 DS1870 DS1870E-010 |
LDMOS RF Power-Amplifier Bias Controller
|
MAXIM[Maxim Integrated Products]
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| MAX11008 MAX11008BETM |
Dual RF LDMOS Bias Controller with Nonvolatile Memory
|
Maxim Integrated Products
|
| MHVIC2115NR2 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor
|
| MHVIC2115R2 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MHV5IC1810N MHV5IC1810N11 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MMRF2006N MMRF2006NT1 |
RF LDMOS Wideband Integrated Power Amplifier
|
NXP Semiconductors
|
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| PTMA180402EL PTMA180402FL |
Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ??2000 MHz
Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ?2000 MHz
|
Infineon Technologies AG
|
| MHPA21010 |
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier
|
Motorola
|
