| PART |
Description |
Maker |
| DM2223T-15 DM2233T-15 DM2233T-15I DM2223T-15I |
Enhanced DRAM (EDRAM) 增强的DRAM（eDRAM内存
|
L-com, Inc.
|
| DM2242J2-12L DM2242J2-12I DM2252J2-12L DM2252J2-12 |
Enhanced DRAM (EDRAM) 增强的DRAM（eDRAM内存
|
Linear Technology, Corp.
|
| DM2M36SJ7-12 DM2M36SJ7-12L DM2M36SJ7-15I DM2M36SJ6 |
Enhanced DRAM (EDRAM) Module 增强的DRAM（eDRAM内存）模
|
Infineon Technologies AG
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| EP7312-CV EP731205 EP7312-CB-90 EP7312-IV-90 EP731 |
High-performance, Low-power, System-on-chip with SDRAM & Enhanced with SDRAM & Enhanced
IC ARM720T MCU 74MHZ 208-LQFP 32-BIT, FLASH, 74 MHz, RISC MICROCONTROLLER, PQFP208
|
Cirrus Logic, Inc.
|
| PM9313-HC PM9315-HC PM9315 PM9311 PM9311-UC PM9312 |
Enhanced TT1TM Switch Fabric
ENHANCED TT1⑩ SWITCH FABRIC
ENHANCED TT1 SWITCH FABRIC
|
PMC[PMC-Sierra, Inc]
|
| PMV45EN PMV45EN-01 |
uTrenchMOS tm enhanced logic level FET
N-channel TrenchMOS logic level FET
mTrenchMOS enhanced logic level FET
From old datasheet system
mTrenchMOSTM enhanced logic level FET
|
NXP Semiconductors N.V.
Philips
|
| GM71V17400CT-6 GM71V17400CCL |
x4 Fast Page Mode DRAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
|
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
