| PART |
Description |
Maker |
| BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| VTA3121 |
Photo Transistor Chips
|
Perkin Elmer
|
| 3PT068080JL |
PHOTO TRANSISTOR CHIPS
|
Silan Microelectronics Joint-stock
|
| SSB-COB13340SYW-B |
SINGLE COLOR DISPLAY CLUSTER, SUPER YELLOW, 133 mm
133mm x 40mm V.A. SUPER YELLOW LED BACKLIGHT CHIPS ON BOARD, 132 CHIPS, 4.2V 660mA
133mm x 40mm V.A. SUPER YELLOW LED BACKLIGHT, CHIPS ON BOARD, 132 CHIPS, 4.2V 660mA
|
ETC
LUMEX INC.
List of Unclassifed Manufacturers
|
| BM-10EG88MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-10EG58MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| CF003-01 CF010-01 CF005-01 |
Broadband Power GaAs MESFET Chips
|
Mimix Broadband
|
| OD-24X24-C |
HIGH-POWER GaAlAs EMITTER CHIPS
|
OptoDiode Corp
|
| IPB80N04S2-04 IPI80N04S2-04 SP0002-18154 SP0002-19 |
80 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SIDC01D60SIC2SAWN SIDC01D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 4A die sawn
Diodes - HV Chips - 600V, 4A die unsawn
|
Infineon
|
| KTD921 |
Darlington Transistor
TRIPLE DIFFUSED NPN TRANSISTOR (COLOR & B/W TV POWER SUPPLY, INDUSTRIAL USE POWER SUPPLY, GENERAL PURPOSE POWER AMPLIFIER DARLINGRON TRANSISTOR)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
