PART |
Description |
Maker |
EUA5202QIR0 EUA5202QIR1 |
NAND (SLC) Flash Memory System, 16GB Parallel IDE Solid State Disk Drive NAND (SLC) Flash Memory System, 1GB Parallel IDE Solid State Disk Drive
|
德信科技股份有限公司
|
NAND01G-M NAND256-M NAND256R3M0 NAND256R3M0AZB5E N |
SPECIALTY MEMORY CIRCUIT, PBGA149 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
|
NUMONYX STMICROELECTRONICS[STMicroelectronics]
|
KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory 512K x 8 bit NAND Flash Memory
|
Samsung semiconductor Samsung Electronic
|
KBE00S009M-D411 KBE00S009M-D4110 |
1Gb NAND x 2 256Mb Mobile SDRAM x 2 SPECIALTY MEMORY CIRCUIT, PBGA137
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
S30MS01GP25TAW002 S30MS512P25TAW012 S30MS512P25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology
|
SPANSION[SPANSION]
|
CY7C68034-56LTXC CY7C6803309 CY7C68034-56LFXC |
EZ-USB NX2LP-FlexFlexible USB NAND Flash Controller FLASH MEMORY DRIVE CONTROLLER, QCC56 EZ-USB NX2LP-Flex Flexible USB NAND Flash Controller
|
Cypress Semiconductor, Corp.
|
AT49F8011-70CI AT49F8011-90CI AT49F8011T-90CC AT49 |
ATS-SSK 0525/110 Quadruple 2-Input Positive-NAND Gate 14-SO -40 to 85 Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125 Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125 8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PBGA48 8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Atmel Corp. Atmel, Corp.
|
TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
HY27UF082G2B HY27UF162G2B HY27UF082G2B-F |
2Gb NAND FLASH 256M X 8 FLASH 3.3V PROM, PBGA63
|
HYNIX SEMICONDUCTOR INC
|
AN1266 |
BENCHMARKING FLASH NOR AND FLASH NAND MEMORIES
|
SGS Thomson Microelectronics
|