PART |
Description |
Maker |
M58CR032C100ZB6T M58CR032C120ZB6T M58CR032C85ZB6T |
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory From old datasheet system
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M28W320CT M28W320CT100GB1T M28W320CT100GB6T M28W32 |
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory 32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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M69AR048B M69AR048BL80ZB8 M69AR048BL85ZB8 |
32 Mbit (2Mb x16) 1.8V Asynchronous PSRAM
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STMicroelectronics
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M50LPW116 9354 M50LPW116N5T M50LPW116N M50LPW116N1 |
16 Mbit 2Mb x8, Boot Block 3V Supply Low Pin Count Flash Memory From old datasheet system 16 MBIT (2MB X8, BOOT BLOCK) 3V SUPPLY LOW PIN COUNT FLASH MEMORY
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M29W320EB70N1 M29W320EB70N1E M29W320EB90N6T M29W32 |
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位Mb的x8或功能的2Mb x16插槽,引导块V电源快闪记忆
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STMicroelectronics N.V. ST Microelectronics
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M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
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SGS Thomson Microelectronics NUMONYX 意法半导 ST Microelectronics
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M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
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Renesas Electronics Corporation. Renesas Electronics, Corp.
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LH28F160S3 LH28F160S3-L10 LH28F160S3-L13 LH28F160S |
LH28F160S3NS-L150 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP LH28F160S3HT-L130 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin TSOP LH28F160S3D-L100 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP LH28F160S3HNS-L120 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP LH28F160S3HNS-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP LH28F160S3HD-L13 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP LH28F160S3HD-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP LH28F160S3HB-L130 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP LH28F160S3HB-L120 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP LH28F160S3HB-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP 16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY 16-MBIT (2MBx8/1MBx16) Smart 3 Flash MEMORY LH28F160S3HB-L100 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP LH28F160S3HB-L13 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP LH28F160S3HB-L150 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin CSP LH28F160S3HD-L120 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP LH28F160S3HD-L150 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP LH28F160S3HNS-L100 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin SSOP LH28F160S3D-L13 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 64 pin SDIP LH28F160S3R-L10 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin TSOP LH28F160S3HR-L120 16MBIT (2MB x 8/1MB x 16)Smart 3 Flash Memory 56 pin TSOP
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SHARP[Sharp Electrionic Components]
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M29W160 M29W160BB M29W160BB120N1T M29W160BT120M6T |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory 16兆位Mb x8兆x16插槽,引导块低压单电源闪
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ST Microelectronics IXYS, Corp. STMicroelectronics N.V.
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M29F016D05 |
16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory
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STMicroelectronics
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M28W320FCT90ZB6F M28W320FCB M28W320FCB10N6E M28W32 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
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STMICROELECTRONICS[STMicroelectronics]
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