PART |
Description |
Maker |
HY62LF16404C |
Super Low Power Slow SRAM - 4Mb High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
HY62LF16201ALLF-85 HY62LF16201ALLF-85I HY62LF16201 |
Super Low Power Slow SRAM - 2Mb x16 SRAM
|
Hynix Semiconductor
|
HY62UF16201A |
Super Low Power Slow SRAM - 2Mb
|
Hynix Semiconductor
|
A0A19 |
Super Low Power Slow SRAM - 8Mb
|
Hynix Semiconductor
|
HY62UF16806B-DFC HY62UF16806B-DFI HY62UF16806B-C H |
x16|3V|55/70/85|Super Low Power Slow SRAM - 8M x16 | 3V的| 55/70/85 |超级低功耗SRAM的速度 800 512Kx16bit full CMOS SRAM
|
GE Security, Inc. Hynix Semiconductor
|
HY62SF16806A-DMC HY62SF16806A-DMI HY62SF16806A-SMI |
x16|1.8V|70/85/100|Super Low Power Slow SRAM - 8M x16 | 1.8 | 70/85/100 |超级低功耗SRAM的速度 800 512Kx16bit full CMOS SRAM
|
Alpha Industries, Inc. Hynix Semiconductor
|
GM76C256CLLFW GM76C256CLL GM76C256C GM76C256CE GM7 |
32K x8 bit 5.0V Low Power CMOS slow SRAM 32K x8 bit 5.0V Low Power CMOS slow SRAM 32K的x8.0V低功耗CMOS SRAM的速度 32K X 8 STANDARD SRAM, 55 ns, PDSO28
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
GM76U256CLT |
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM 256K X 8 STANDARD SRAM, 55 ns, PBGA36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
CS18LV10245EI CS18LV10245LI CS18LV10245 CS18LV1024 |
From old datasheet system HIgh Speed Super Low Power SRAM
|
Electronic Theatre Controls, Inc. CHIPLUS ETC[ETC] List of Unclassifed Manufacturers
|
K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44 From old datasheet system 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|