| PART |
Description |
Maker |
| M57747 57747 |
144-148MHz / 12.5V / 13W / FM MOBILE RADIO
From old datasheet system
144-148MHZ, 12.5V, 13W, FM MOBILE RADIO
|
Mitsubishi
|
| M67727 67727 |
144-148MHz /12.5V /60W / SSB MOBILE RADIO
144-148MHz,12.5V,60W, SSB MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67798 M67798LA M67796LA |
144-148MHz / 9.6V / 8W / FM PORTABLE RADIO
RF POWER MODULE 144-148MHz, 9.6V, 8W, FM PORTABLE RADIO
RF power module for 144-148MHz, 9.6V, 8W FM portable radio
|
Mitsubishi Electric Corporation
|
| M57726R |
144-148MHz, 12.5V, 43W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| M67727 |
RF POWER MODULE 144-148MHz, 12.5V, 60W, SSB MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| IS28F020BVB-120T IS28F020BVB-120TI IS28F020BVT-120 |
262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY
** MISC CRYSTALS **
CRYSTAL 9.8304MHZ 20PF SMD
G1 NON-802.15.4 2.4GHZ 262,144 × 8 SmartVoltage引导块闪
|
Integrated Silicon Solution, Inc.
|
| VSC3040 |
11 Gbps 144 × 144 Asynchronous Crosspoint Switch
11 Gbps 144 】 144 Asynchronous Crosspoint Switch
|
Vitesse Semiconductor Corporation
|
| A23W8308 A23W8308L A23W8308H A23W8308M |
262,144 X 8 BIT CMOS MASK ROM
120ns/5.0V; 150ns/3.0V 262,144 x 8bit CMOS MASK ROM
|
AMIC Technology
|
| GS4576C18GL-24T GS4576C18GL-24I GS4576C18L-18T |
DDR DRAM, PBGA144 ROHS COMPLIANT, UBGA-144
DDR DRAM, PBGA144 UBGA-144
|
GSI Technology, Inc.
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
