PART |
Description |
Maker |
TC58NVG0S3AFT00 |
1 GBit CMOS NAND EPROM
|
Toshiba
|
TC58NS100DC |
1 GBit CMOS NAND EPROM
|
Toshiba
|
NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,4千兆位,8千兆112 Byte/1056字的页面.8V/3V,NAND闪存
|
STMicroelectronics N.V.
|
S34MS01G2 S34MS02G2 S34MS04G2 |
1 Gbit/2 Gbit/4 Gbit SLC NAND Flash for Embedded
|
Cypress Semiconductor
|
TC58NVG6DDJTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
TC58NS128BDC |
128 MBit CMOS NAND EPROM
|
Toshiba
|
TC58128FTI |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
TC58V64BFT |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面1.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
NMC27C64 NMC27C64N200 NMC27C64Q150 NMC27C64NE200 |
65 /536-Bit (8192 x 8) CMOS EPROM IC-64K CMOS PROM 8K X 8 EEPROM 5V, 200 ns, PDIP28 65,536-Bit (8192 x 8) CMOS EPROM 64KBit (8192 x 8) CMOS EPROM [Life-time buy]
|
Fairchild Semiconductor, Corp.
|