PART |
Description |
Maker |
S29WS128P0PBAW002 S29WS256P0PBAW000 S29WS128P0LBAW |
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 8M X 16 FLASH 1.8V PROM, 80 ns, PBGA84 512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA84 512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
|
Spansion, Inc.
|
S72NS128PD0KJFGC3 S72NS128PD0KJFGC2 S72NS128PD0AJF |
MirrorBit Flash Memory and DRAM SPECIALTY MEMORY CIRCUIT, PBGA128 MirrorBit Flash Memory and DRAM MirrorBit闪存和DRAM
|
Spansion, Inc. Spansion Inc.
|
S29GL01GP S29GL-P12 S29GL01GP11TFIR20 S29GL256P90T |
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology MirrorBit? Flash Family MirrorBit? Flash Family
|
SPANSION
|
S29GL01GP12TFI023 S29GL128P13FAI023 S29GL01GP12FAI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
AM29LV160M AM29LV160MB100FI AM29LV160MB100PCI |
(2M x 8-bit/1M x 16-bit) MirrorBit Boot Sector Flash Memory (Advance Information) 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory From old datasheet system
|
AMD Inc Advanced Micro Devices
|
AM29LV640MU101WHI AM29LV640MU101RWHI AM29LV640MU10 |
64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with 4M X 16 FLASH 3V PROM, 120 ns, PBGA64
|
Advanced Micro Devices, Inc.
|
UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 |
8K X 8 STANDARD SRAM, 55 ns, CDFP28 8K X 8 STANDARD SRAM, 55 ns, CDIP28 32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷 4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 64 Mb (4M x 16) Boot Sector, Flash Memory SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
|
Maxim Integrated Products, Inc.
|
AT49LV2048A AT49BV2048A AT49LV2048A-70TC AT49LV204 |
2M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot 2M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
|
Atmel
|
AM29LV033MUU101RFI AM29LV033MUU112EI AM29LV033MUU1 |
32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 32兆位个M × 8位)的MirrorBit 3.0伏特,只有统一闪存部门与VersatileI / O控制
|
Advanced Micro Devices, Inc.
|
AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位)的CMOS 1.8伏,只有同时写,突发模式闪存
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
S25FL127S |
128 Mbit (16 Mbyte) MirrorBit Flash Non-Volatile Memory
|
SPANSION
|
S29GL128P90FFI010 S29GL128P90FFI012 S29GL128P90FFI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
|
SPANSION
|