| PART |
Description |
Maker |
| CLY2 |
High Power Packaged GaAs FET; 23.5 dBm
|
TriQuint Semiconductor
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PB-CMM0511-QT-0000 CMM0511-QT-0G0T CMM0511-QT-0G00 |
5.0-14.0 GHz GaAs MMIC Packaged Driver Amplifier 5.0-14.0 GHz的砷化镓微波单片集成电路封装驱动放大
5.0-14.0 GHz GaAs MMIC Packaged Driver Amplifier 5000 MHz - 14000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Mimix Broadband, Inc.
ATM Electronic, Corp.
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| FLL810IQ-4C |
L-Band High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLL2400IU-2C |
L-Band High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| FLL21E135IX |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL810IQ-3C |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL1200IU- FLL1200IU-3 |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Eudyna Devices Inc
|
| FLL21E040IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
