PART |
Description |
Maker |
MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
TGA2583-15 |
2.7 3.7GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
SY58011UMG SY58011UMITR SY58011UMI SY58011U SY5801 |
7GHZ, 1:2 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION
|
MICREL[Micrel Semiconductor]
|
MGFS48V2527 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V7177 |
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RFRX1702 |
GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz
|
RF Micro Devices
|
MGFC40V6472_04 MGFC40V6472 MGFC40V647204 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V5964A |
5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
2SC5488A12 2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
ON Semiconductor Sanyo Semicon Device
|
MGFC40V7785B C407785B |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|