PART |
Description |
Maker |
D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
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CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
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Continental Device India Limited
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MJ15003 MJ15004 ON1980 |
From old datasheet system 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS POWER TRANSISTORS COMPLEMENTARY SILICON 20 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
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MOTOROLA INC MOTOROLA[Motorola, Inc] ON Semiconductor
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D44H06 D45H8G D44H D44H11 D44H11G D44H8 D44H8G D45 |
Complementary Silicon Power Transistor(互补型PNP硅功率晶体管) Complementary Silicon Power Transistors
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ONSEMI[ON Semiconductor]
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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MJ11028 MJ11029 MJ11033 MJ11030 MJ11031 MJ11032 |
COMPLEMENTARY DARLINGTON POWER TRANSISTOR
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SemeLAB SEME-LAB[Seme LAB]
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TIP131 |
Complementary Darlington Power Transistor
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ON Semiconductor
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CJD340 CJD350 |
COMPLEMENTARY SILICON POWER TRANSISTOR
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CENTRAL[Central Semiconductor Corp]
|
2SA900 2SA0900 |
For low-frequency Power amplification Complementary 1 A, 18 V, PNP, Si, POWER TRANSISTOR, TO-126
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Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
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BDX34BG |
Darlington Complementary Silicon Power Transistors 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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ON Semiconductor
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CJD295510 CJD3055 CJD3055LEADFREE |
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 60 V, NPN, Si, POWER TRANSISTOR
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Central Semiconductor Corp
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