PART |
Description |
Maker |
DS1225AB-200IND |
64k Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
21-30-115 22-40-220 22-40-100 22-40-115 22-40-230 |
Analog IC 64K Nonvolatile SRAM 模拟IC
|
Molex, Inc.
|
X9316W X9316WP X9316WP3 X9316WPI X9316WPI3 X9316WP |
E 2 POT?Nonvolatile Digital Potentiometer E 2 POT?/a> Nonvolatile Digital Potentiometer E 2 POT?/a> Nonvolatile Digital Potentiometer E 2 POT Nonvolatile Digital Potentiometer E 2 POT⑩ Nonvolatile Digital Potentiometer BRIDGE RECTIFIER, 1.2A 40VBRIDGE RECTIFIER, 1.2A 40V; Voltage, Vrrm:120V; Voltage, input RMS:40V; Current, output max:2.5A; Phases, No. of:1; Current, Ifs max:80A; Length / Height, external:12mm; Depth, external:5mm; Width, 首页2锅⑩非易失数字电位器 E2POT nonvolatile digital potentiometer
|
XICOR[Xicor Inc.] NXP Semiconductors N.V.
|
AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28 64K X 8 OTPROM, 90 ns, PDIP28 64K X 8 UVPROM, 55 ns, CDIP28 64K X 8 UVPROM, 90 ns, CDIP28 64K X 8 UVPROM, 70 ns, CDIP28 IC 集成电路 512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
ADVANCED MICRO DEVICES INC SPANSION LLC Rochester Electronics, LLC AMD
|
W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20 BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20 From old datasheet system
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100 3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100 3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
|
IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位) P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
DS1746 DS1746-70 DS1746-70IND DS1746P DS1746P-70 D |
Y2K-Compliant, Nonvolatile Timekeeping RAMs 千年虫的,非易失时钟存储 Y2K-Compliant / Nonvolatile Timekeeping RAMs Y2KC Nonvolatile Timekeeping RAM
|
Maxim Integrated Products, Inc. DALLAS[Dallas Semiconductor] Dallas Semiconducotr MAXIM - Dallas Semiconductor
|
IBM041813PPLB |
64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝发流水线式线式高性能静态RAM) 64K的X管道18的SRAM00万(64K的X 18)同步可猝发流水线式线式高性能静态内存)
|
International Business Machines, Corp.
|
W29N102C |
64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V电源供电的CMOS闪速存储器)
|
Winbond Electronics Corp
|
CY7C1021B-15VXC CY7C1021B-15VXE CY7C1021B-15VXI CY |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|