| PART |
Description |
Maker |
| FS300R12KE3 FS300R12KE305 |
EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode
|
eupec GmbH
|
| FS300R17KE4 |
EconoPACK? module with trench/fieldstop IGBT4 and Emitter Controlled3 diode
|
Infineon Technologies AG
|
| FS150R17PE4 |
EconoPACK?? Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC
EconoPACK? Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC
|
Infineon Technologies AG
|
| FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FG |
1200V NPT Trench IGBT
NPT Trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability
|
Fairchild Semiconductor
List of Unclassifed Manufacturers
|
| 60CTTN015 |
15V 60A Trench Schottky Discrete Diode in a TO-220 package
TRENCH SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| 60CTT015 |
30 A, 15 V, SILICON, RECTIFIER DIODE, TO-220AB
TRENCH SCHOTTKY RECTIFIER
15V 60A Trench Schottky Discrete Diode in a TO-220 package
|
VISHAY SEMICONDUCTORS
IRF[International Rectifier]
|
| Q67040S4726 IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology
|
INFINEON[Infineon Technologies AG]
|
| CM50TJ-24F |
128 x 64 pixel format, LED or EL Backlight available
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a>
N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз
N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| BSS138PW |
60 V, 320 mA N-channel Trench MOSFET
60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
