| PART |
Description |
Maker |
| ZVP2106G-15 |
60V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET
|
Diodes Incorporated
|
| FTD7003 |
Pch Pch
P-Channel Silicon MOSFET High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| QS8J13 QS8J13TR |
-12V Pch Pch Middle Power MOSFET
|
ROHM
|
| FTD1003 |
Pch Pch
Load Switching Applications
|
Sanyo Semicon Device
|
| TT8J21 TT8J2109 |
1.5V Drive Pch Pch MOSFET
|
http://
Rohm
|
| TT8J13 |
1.5V Drive Pch Pch MOSFET
|
http://
|
| QS6J11 |
1.5V Drive Pch Pch MOSFET
|
Rohm
|
| SH8J65TB |
4V Drive Pch Pch MOSFET
|
ROHM
|
| QS6J11TR |
1.5V Drive Pch Pch MOSFET
|
ROHM
|
| TT8J1 TT8J109 |
1.5V Drive Pch Pch MOSFET
|
Rohm
|
| QS8J12 |
1.5V Drive Pch Pch MOSFET
|
Rohm
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
