PART |
Description |
Maker |
APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo... Advanced Power Technology Ltd.
|
KU3600N10D |
N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR
|
KEC(Korea Electronics)
|
2SK1290 TC-2389 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system N-Channel MOS Field Effect Power Transistor
|
NEC[NEC]
|
NP80N055PDG-E1B-AY NP80N055PDG-E2B-AY NP80N055MDG- |
MOS FIELD EFFECT TRANSISTOR 80 A, 55 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
FDB86360-F085 FDB86360F085 |
N-Channel Power Trench MOSFET 80V, 110A, 1.8mOhms N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC]
|
APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1200V 8A 1.600 Ohm
|
http:// ADPOW[Advanced Power Technology]
|
APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT8058HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT8065 APT8065AVR |
POWER MOS V 800V 11.5A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6011LVFR |
POWER MOS V 600V 49A 0.110 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|