| PART |
Description |
Maker |
| KMA2D0DP20X |
TSOP-6 PACKAGE
|
KEC(Korea Electronics)
|
| K4H280438F-ULA2 K4H280838F-UCB3 K4H280838F-ULB3 K4 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅DDR SDRAM的规6 TSOP-II免费（符合RoHS
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4 |
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费
DELTA CONN 14POS PLUG W/O INSERT
DELTA CONN 14 POS PLUG BAIL LOCK
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| IRF5810TR |
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
|
International Rectifier
|
| V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
| IRLMS1902 IRLMS1902TR |
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| IRFTS9342 IRFTS9342TRPBF |
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| HSMS286L-BLK HSMS286L-TR1 HSMS286P-BLK HSMS286P-TR |
ARRAY OF INDEPENDENT DIODES|TSOP
BRIDGE/RING DIODE ARRAY|TSOP 环二极管阵列|的TSOP
|
Avago Technologies, Ltd.
|
| MX23L12810-1 MX23L12810RC-10 MX23L12810RC-12 MX23L |
CAP TANT LOWESR 33UF 25V 20% SMD 8M X 16 MASK PROM, 120 ns, PDSO48
NEW 128M-BIT (16M x 8 / 8M x 16) MASK ROM FOR TSOP PACKAGE
|
Macronix International Co., Ltd.
PROM
MCNIX[Macronix International]
|
| CY14B101MA-ZSP25XIT CY14B101MA-ZSP45XI |
1 Mbit (128K x 8/64K x 16) nvSRAM with Real Time Clock; Organization: 64Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: TSOP
64K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54
|
CYPRESS SEMICONDUCTOR CORP
|
| CY14B104K-ZSP25XI CY14B104K-ZSP15XI CY14B104M-ZSP1 |
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: 0° to 70°C; Package: 54-TSOP-II; Features: Real-Time Clock
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
