| PART |
Description |
Maker |
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| HSCH-9102 HSCH-9151 HSCH-9101 HSCH-9251 |
HSCH-9251 · Beamlead GaAs Schottky barrier diodes
HSCH-9101 · Beamlead GaAs Schottky barrier diodes
GaAs Beam Lead Schottky Barrier Diodes
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| MA3S781E MA3S781D |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| MA2SE01 |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
Panasonic Semiconductor
|
| SB1003EJ |
Small Signal Schottky Barrier Diodes
SCHOTTKY BARRIER DIODE 30V, 1A RECTIFIER
|
SANYO[Sanyo Semicon Device]
|
| 1PS70SB14 1PS70SB10_14_15_16_1 1PS70SB16 1PS70SB10 |
Schottky Barrier (Double) Diodes(肖特基势垒（双）二极
From old datasheet system
Schottky barrier double diodes
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| HSB226WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAT754 BAT754A BAT754C BAT754S BAT754_SERIES_1 BAT |
From old datasheet system
Schottky barrier double diodes
Schottky barrier (double) diodes
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| FM05100-M FM0530-M FM0540-M FM0520-M FM0550-M FM05 |
Chip Schottky Barrier Diodes - Chip Schottky Barrier Diodes 贴片肖特基二极管-肖特基二极管芯片
|
美丽微半导体有限公司
Formosa Microsemi Co., Ltd.
|
