| PART |
Description |
Maker |
| IGC13T120T6L |
IGBT4 Low Power Chip
|
Infineon Technologies AG
|
| IGC109T120T6RL |
IGBT4 Low Power Chip
|
Infineon Technologies AG
|
| MCA104 |
Multi-Chip Array Two NPN and Two PNP High Speed / Medium Power Switching Transistors
MULTI-CHIP ARRAY TWO NPN AND TWO PNP HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
Semelab PLC
SEME-LAB[Seme LAB]
|
| IDC28D120T6M |
Diode EMCON 4 Medium Power Chip
|
Infineon Technologies AG
|
| IDC08D120T6M |
Diode EMCON 4 Medium Power Chip
|
Infineon Technologies AG
|
| AFM04P3-000 |
Low Noise/Medium Power GaAs MESFET Chip
|
Alpha Industries Inc
ALPHA[Alpha Industries]
|
| AT-42085 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体
|
Agilent(Hewlett-Packard)
|
| APTGL40X120T3G |
3 Phase bridge Trench Field Stop IGBT4 Power Module
|
Microsemi Corporation
|
| APTGL700U120D4G10 |
Single switch Trench Field Stop IGBT4 Power Module
|
Microsemi Corporation
|
| APTGL90A120T1G |
Phase leg Trench Field Stop IGBT4 Power module
|
Microsemi Corporation
|
| APTGL180A120T3AG11 |
Phase leg Trench Field Stop IGBT4 Power Module
|
Microsemi Corporation
|
