| PART |
Description |
Maker |
| AN671 |
ST6 - PREVENTION OF DATA CORRUPTION IN ST6 ON-CHIP EEPROM
|
SGS Thomson Microelectronics
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| AN435 |
ST6 - DESIGNING WITH MICROCONTROLLERS IN NOISY ENVIRONMENTS
|
SGS Thomson Microelectronics
|
| DG412CY DG413C_D DG413CJ DG413CUE DG411C_D DG411CU |
Improved Quad SPST Analog Switches
Improved / Quad / SPST Analog Switches
Improved, Quad, SPST Analog Switches QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, UUC16
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| LB1674 LB1674M |
Brushless / Sensorless Motor Driver
Brushless, Sensorless Motor Driver
Monolithic Digital IC
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| AN885 |
ST6 - MICROCONTROLLERS DRIVE HOME APPLIANCE MOTOR TECHNOLOGY
|
SGS Thomson Microelectronics
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| AN1050 |
ST6 - INPUT CAPTURE WITH ST62 16-BIT AUTO-RELOAD TIMER
|
SGS Thomson Microelectronics
|
| TDA4863G TDA4863 Q67040-A4451 Q67040-S4452 |
Power Control ICs - Improved PFC-IC for in SMD-Package
Power Control ICs - Improved PFC-IC for DCM
Boost Controller
|
Philips Semiconductors
INFINEON[Infineon Technologies AG]
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
