PART |
Description |
Maker |
NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
SST25VF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Spi Serial Flash
|
SST
|
M29W800DT70N6E M29W800DT70N6F M29W800DT70N6T M29W8 |
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
|
Numonyx B.V
|
M36P0R9060N0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
M48Z512A10 M48Z512A-85PM6 M48Z512A-85PM1 M48Z512AY |
4 Mbit (512 Kbit x 8) ZEROPOWER庐 SRAM 4 Mbit (512 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics http://
|
M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60 512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
CY7C1381D-133AXI CY7C1381D-100AXC CY7C1381D-100BZI |
18 Mbit (512 K ? 36/1 M ? 18) Flow Through SRAM 18 Mbit (512 K × 36/1 M × 18) Flow Through SRAM
|
Cypress Semiconductor
|
CY62157E |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
CY7C1443AV33 CY7C1441AV33-133AXC CY7C1441AV33-133A |
36-Mbit (1 M x 36/2 M x 18/512 k x 72) Flow-Through SRAM
|
Cypress Semiconductor
|