PART |
Description |
Maker |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
BF1205C |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
BF989 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors Vishay Siliconix Philips Semiconductors
|
3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
3SK321 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
3SK103 |
Silicon N-Channel Dual Gate MOS FET
|
ETC
|
3SK186 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|