| PART |
Description |
Maker |
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| NE72218 NE72218-T1 |
C TO X BAND N-CHANNEL GaAs MESFET
|
California Eastern Labs
|
| NEZ6472-15D NEZ4450-15DD |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Electronics Industry Public Company Limited
|
| NEZ1011-4E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET T-78, 2 PIN
|
NEC, Corp.
|
| CF739E6433 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
TRIQUINT SEMICONDUCTOR INC
|
| CLY32-00S INFINEONTECHNOLOGIESAG-CLY32-05ES |
C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
INFINEON TECHNOLOGIES AG
|
| NE67483B |
(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
|
CEL
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| FH101 |
GaAs MESFET
|
TriQuint Semiconductor
|
| NE76100_99 NE76100 NE76100M NE76100N NE7610099 |
GENERAL PURPOSE GaAs MESFET
|
NEC[NEC]
|
