| PART |
Description |
Maker |
| MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MGP20N35CL_D ON1862 MGP20N35CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V CE(on) = 1.8 VOLTS 350 VOLTS (CLAMPED)
|
ONSEMI[ON Semiconductor]
|
| MLP2N06CL MLP2N06CLG |
SMARTDISCRETES MOSFET 2 Amps, 62 Volts, Logic Level(2A, 62V, 逻辑电平SMARTDISCRETES MOSFET)
SMARTDISCRETES TM MOSFET 2 Amps, 62 Volts, Logic Level N−Channel TO−220
|
ONSEMI[ON Semiconductor]
|
| MLD2N06CLT4 MLD2N06CLT4G MLD2N06CL MLD2N06CLG |
SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK
SMARTDISCRETES MOSFET 2 Amp, 62 Volts, Logic Level N Channel DPAK(智能MOSFET)
|
http://
ONSEMI[ON Semiconductor]
|
| MC1471 MC1471C MC1741CDR2 MC1741CP1 MC1741CD MC174 |
Internally Compensated, High Performance Operational Amplifier
From old datasheet system
Internally Compensated / High Performance Operational Amplifier
Internally Compensated, High Performance Operational Amplifier
OP-AMP, 1 MHz BAND WIDTH, PDIP8
|
ONSEMI[ON Semiconductor]
|
| MGFC26V5964A MGFC36V5964A MGFC36V59964A |
5.9-6.4 GHz BAND 4W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
5.9-6.4GHz band 4W internally matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5964A C365964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V5964 C445964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V5964A C405964A |
5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
