| PART |
Description |
Maker |
| IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| KMM372V3280BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| IBM13Q32734BCA-10Y |
x72 SDRAM Module
32M x 72 Registered SDRAM Module(32M x 72 200脚寄存同步动态RAM模块) 32M × 72配置注册内存模块2M × 72配置200脚寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| EDX5116ABSE-3B-E EDX5116ABSE-3A-E EDX5116ABSE-3C-E |
512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104
|
Elpida Memory, Inc.
DRAM
|
| HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402
512Mb (32M x 16) PC133 2-2-2 Available Q402
512Mb (32M x 16) PC133 3-3-3 Available Q402
128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| KM23C32101C |
32M-Bit (4Mx8) CMOS MASK ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32120C |
32M-Bit (4Mx8) CMOS Mask ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC
x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5（VDD）在2.5（提供VDDQ）V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
| HYS64V16300GU HYS72V16300GU HYS64V32220GU HYS72V32 |
3.3 V 16M × 64-Bit 1 Bank SDRAM Module(3.3 V 16M × 64-1同步动态RAM模块)
3.3 V 16M × 72-Bit 1 Bank SDRAM Module(3.3 V 16M × 72-1同步动态RAM模块)
3.3 V 32M × 64-Bit 1 Bank SDRAM Module(3.3 V 32M × 64-1同步动态RAM模块)
3.3 V 32M × 72-Bit 1 Bank SDRAM Module(3.3 V 32M × 72-1同步动态RAM模块)
32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
