| PART |
Description |
Maker |
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| DOM44KR032 HFDOM44KR192 DOM44KR016 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co., Ltd.
|
| HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02
512MB PC133 (3-3-3) 1-bank
POT 100 OHM 3/8 SQ CERM SL ST
2GB PC133 (3-3-3) 2-bank available 4Q02
256MB PC133 (3-3-3) 1-bank End-of-Life
512MB PC100 (2-2-2) 1-bank End-of-Life
1GB PC133 (3-3-3) 2-bank End-of-Life
2GB PC133 (2-2-2) 2-bank available 4Q02
PC133 Registered SDRAM-Modules PC133的SDRAM的注册模
1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的（3-3-3银行提供待定
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Infineon Technologies AG
Infineon Technologies A...
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- |
256MB (32Mx72) PC1600 1-bank
512MB (64Mx72) PC1600 1-bank
512MB (64Mx72) PC2100 1-bank
1GB (128Mx72) PC1600 2-bank
1GB (128Mx72) PC2100 2-bank GB的（128Mx72）PC2100 2银行
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Infineon Technologies AG
|
| ISL35111 ISL35111DRZ-T7 ISL35111DRZ-TS |
11.1Gb/s Driver
|
Intersil Corporation
|
| H26M11001BAR |
1GB e-NAND
|
Hynix
|
| HY27UA081G1M HY27SA161G1M HY27SA081G1M |
NAND Flash - 1Gb
|
Hynix Semiconductor
|
| TS1GJFV60 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| TS1GJF160 |
1GB USB2.0 JetFlash?
|
Transcend Information. ...
|
| TS1GJFT3 |
1GB USB2.0 JetFlash?T3
|
Transcend Information. ...
|
| H5PS1G63JFR H5PS1G63JFRC4C H5PS1G63JFRC4I H5PS1G63 |
1Gb DDR2 SDRAM
|
Hynix Semiconductor
|
