| PART |
Description |
Maker |
| 6N90 |
900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 11N90 11N90L-TF1-T 11N90G-TF1-T 11N90G-TA3-T 11N90 |
11 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| SDR9369M SDR936DM |
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30放大器至9000纳秒超快速整
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid State Devices, Inc.
Micron Technology, Inc.
|
| 2SK1984-01MR |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IXFT16N90Q IXFH16N90Q IXFK16N90Q |
HiPerFET Power MOSFETs Q-Class 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IPW90R340C3 |
15 A, 900 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| QIS1790001 |
Single IGBT Module 900 Amperes/1700 Volts
|
Powerex Power Semicondu...
|
| SDR529SMS SDR526 SDR526SMS SDR527 SDR527SMS SDR528 |
3 AMPS 600 - 900 VOLTS 35 nsec HYPER FAST RECTIFIER
|
Solid States Devices, I...
SSDI[Solid States Devices, Inc]
|
|
