| PART |
Description |
Maker |
| HYB39D128323C-4.5 HYB25D128323C-3.0 HYB25D128323C- |
Specialty DRAMs - 333MHz (4Mx 32)
Specialty DRAMs - 300MHz (4M x 32)
Specialty DRAMs - 275MHz (4M x 32) Low power
Specialty DRAMs - 222MHz (4M x 32) Low power
|
Infineon
|
| HYB25D256161CE-4.0 HYB25D256161CE-5.0 |
Specialty DRAMs - 250MHz (16Mx16)
Specialty DRAMs - 200MHz (16Mx16)
|
Infineon
|
| M464S0924CT1 M464S0924CT1-C1H M464S0924CT1-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| NT128S64VH8C0GM-75B NT128S64VH8C0GM-8B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| K3P9VU1000A-YC |
128M-Bit (16Mx8 /8Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| HYE18P32161AC HYE18P32161ACL70 HYE18P32161ACL85 HY |
Specialty DRAMs - 2Mx16, VGBGA-48; Available 2Q04
32M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| HY5DU281622ETP-25 HY5DU281622ETP-26 HY5DU281622ETP |
128M(8Mx16) gDDR SDRAM
8M X 16 DDR DRAM, 0.6 ns, PDSO66
8M X 16 DDR DRAM, 0.55 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| M470L1714BT0-CLB0 M470L1714BT0-CLA0 M470L1714BT0-C |
16Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet
128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HM5212165F HM5212805FLTD-B60 |
128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) 128MLVTTL接口的SDRAM28MLVTTL接口同步的DRAM
SYNCHRONOUS DRAM, PDSO54
|
Fairchild Semiconductor, Corp.
|
| AT88SC0404CA-MJ88SC0404 AT88SC0404CA-MP88SC0404 AT |
SPECIALTY MEMORY CIRCUIT, QMA
SPECIALTY MEMORY CIRCUIT, DMA
SPECIALTY MEMORY CIRCUIT WAFER
SPECIALTY MEMORY CIRCUIT, PDIP8 GREEN, PLASTIC, PDIP-8
SPECIALTY MEMORY CIRCUIT, PTSO8 4.40 MM, GREEN, PLASTIC, TSSOP-8
|
Atmel, Corp.
ATMEL CORP
|
| E28F128J3A150 |
IC,EEPROM,NOR FLASH,8MX16/16MX8,CMOS,TSSOP,56PIN,PLASTIC
|
Intel Corp
|
