PART |
Description |
Maker |
E28F004B5T60 E28F004B5T80 28F200B5 E28F400B5B60 E2 |
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2/ 4/ 8 MBIT SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2 / 4 / 8 MBIT Dual-Slot, PCMCIA Analog Power Controller SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 1M X 8 FLASH 5V PROM, 90 ns, PDSO48 DIRECTIONAL COUPLER, 20DB, SMT 256K X 8 FLASH 5V PROM, 70 ns, PDSO48 SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 1M X 8 FLASH 5V PROM, 80 ns, PDSO48
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Intel Corporation Intel Corp. Intel, Corp.
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M58LW064 M58LW064BT M58LW064A150T6T M58LW064AZA M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories 64兆位x16和x16/x32,块擦除低压闪存
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意法半导 STMicroelectronics N.V.
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M25PX64-STVME6E M25PX64-STVME6F M25PX64-STVMF6E M2 |
64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface
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Numonyx B.V
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M25PX32 |
32-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface
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Numonyx B.V
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M25PX64-VMF6TP |
64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface
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Numonyx B.V
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M25PX16 M25PX16-VMN6TP M25PX16SOVZM6TP |
16-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface
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Micron Technology Numonyx B.V
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M25PX64 M25PX64-VME6E M25PX64-VME6F M25PX64-VMF6E |
64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface
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Numonyx B.V http://
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AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
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Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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M5M29GB |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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Mitsubishi Electric Corporation
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M29F100B M29F100T 5123 M29F100B-90M1R M29F100B-90M |
NND - 1 MBIT (128KB X 8 OR 64KB X 16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory From old datasheet system 1 Mbit (128Kb x8 or 64Kb x16, Boot Block)Single Supply Flash Memory
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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N25Q128A13TSF40E N25Q128A13TSF40F N25Q128A13TSF40G |
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
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Numonyx B.V
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