| PART |
Description |
Maker |
| KQT0402TD36NH |
1 ELEMENT, 0.036 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
KOA SPEER ELECTRONICS INC
|
| PE1002-2 |
Field Replacable Tab Contact 0.036 Contact Diameter And .005 x .020 Tab
|
Pasternack Enterprises, Inc.
|
| IS9-2100ARH/PROTO 5962F9953602QXC IS9-2100ARH-Q IS |
High Frequency Half Bridge Driver, Rad-Hard, without UVLO
RES POWER .036 OHM 3W 5% SMT
Radiation Hardened High Frequency Half Bridge Driver 1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation
Intersil, Corp.
|
| 0805CS-030XMLC 0805CS-390XMLC 0805CS-470XKLC 0805C |
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0033 uH, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.039 uH, GENERAL PURPOSE INDUCTOR, SMD
OBSOLETE when inventory is depleted. 10% tolerance no longer offered. Change 'K' to 'J' for 5% tolerance. 1 ELEMENT, 0.047 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.091 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.036 uH, GENERAL PURPOSE INDUCTOR, SMD
|
Coilcraft, Inc.
COILCRAFT INC
|
| UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS |
MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
|
意法半导
STMicroelectronics N.V.
|
| CI0603-18N-GTW CI0402-8N2-FTW CI0603-68N-GTW CI040 |
1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 0603, ROHS COMPLIANT
1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 0402, ROHS COMPLIANT
1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 0603, ROHS COMPLIANT
1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 0805, ROHS COMPLIANT
1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1008
1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1008, ROHS COMPLIANT
1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 0805, ROHS COMPLIANT
1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0075 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.036 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.1 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.023 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0039 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.15 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.015 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
RCD Components, Inc.
RCD COMPONENTS INC
|
| WP5S-0.018OHMJT07 WP5S-0.024OHMJT07 WP5S-0.03OHMJT |
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.018 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.024 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.03 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.022 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.016 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.027 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.039 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.091 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.02 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.043 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 5 W, 5 %, 350 ppm, 0.036 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
|
Welwyn Components, Ltd.
|
| CW1XCT52A0.015OHMJ CW1XCT52A0.024OHMJ CW1XCT52A0.0 |
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.024 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.027 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.016 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.036 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.011 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.012 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.018 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.039 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.043 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.013 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 5 %, 500 ppm, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 1 W, 1 %, 50 ppm, 6.04 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 3 W, 1 %, 50 ppm, 0.604 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
|
KOA Speer Electronics,Inc.
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
|
