| PART |
Description |
Maker |
| 88NXX1112 |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
|
Unisonic Technologies
|
| 88NXX |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
|
Unisonic Technologies
|
| 88CXX-AF5-R 88CXXL-AF5-R 88CXXG-AF5-R |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
|
Unisonic Technologies
|
| R3131N44DA5-TR R3130N16EA R3130N26AA R3130N26BA R3 |
Low Voltage Detector with built-in Delay Circuit
|
RICOH[RICOH electronics devices division]
|
| XC61FC1612LR XC61FN1612LH XC61FC1612MH XC61FC1652M |
Voltage Detectors, Delay Circuit Built-In 电压检测器，延迟电路内
|
TOREX SEMICONDUCTOR LTD.
Torex Semiconductor, Ltd.
|
| R3118X |
CMOS-based voltage monitor with built-in output delay circuit
|
Ricoh Co., Ltd.
|
| RN1967FE RN1968FE RN1969FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN1973 |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit andDriver Circuit Applications.
|
TOSHIBA
|
| RN1108FT RN1109FT RN1107FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN2910FE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
