| PART |
Description |
Maker |
| GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM
133MHz 1M x 18 synchronous SRAM
150MHz 1M x 18 synchronous SRAM
166MHz 1M x 18 synchronous SRAM
200MHz 1M x 18 synchronous SRAM
225MHz 1M x 18 synchronous SRAM
250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
| HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT |
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
2.5V 512K x 32/36 flowthrough burst synchronous SRAM
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
|
| CY7C1350F CY7C1350F-100AC CY7C1350F-100AI CY7C1350 |
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 4.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PQFP100
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, PE-SR047FL (.047" RE-SHAPABLE) 128K X 36 ZBT SRAM, 3.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl(TM) Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| DS1220AB-200-IND DS1220Y DS1220Y-100 DS1220Y-120 D |
2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24
2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24
16K Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24
16K Nonovolatile SRAM
From old datasheet system
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
http://
|
| M48Z2M1Y10 M48Z2M1V-85PL1 M48Z2M1Y-85PL1 M48Z2M1Y- |
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER庐 SRAM
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER? SRAM
2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
|
STMicroelectronics
|
| WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM（存取时7ns
128Kx8 3.3单片的SRAM28Kx83.3伏，单片静态随机存储器（存取时间为35ns））
128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
128K X 8 STANDARD SRAM, 20 ns, CDFP32
|
White Electronic Designs Corporation
White Electronic Designs, Corp.
|
| AS5C4009ECJ-85L_883C AS5C4009ECJ-85L_IT AS5C4009EC |
512K x 8 SRAM Ultra Low Power SRAM
512K X 8 STANDARD SRAM, 100 ns, CDIP32
512K X 8 STANDARD SRAM, 85 ns, CDSO32
512K X 8 STANDARD SRAM, 70 ns, CDSO32
512K X 8 STANDARD SRAM, 55 ns, CDSO32
|
MICROSS COMPONENTS
AUSTIN SEMICONDUCTOR INC
|
| HY62LF16804A-I HY62LF16804A-C HY62LF16804A HY62LF1 |
512K X 16 STANDARD SRAM, 85 ns, PBGA48
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
512Kx16bit full CMOS SRAM
|
HYNIX SEMICONDUCTOR INC
Nel Frequency Controls,inc
|
| WPS512K32-15PJC WPS512K32-15PJI WPS512K32-17PJC WP |
512K x 8 SRAM, 15ns
512K x 8 SRAM, 17ns
512K x 8 SRAM, 20ns
512K x 8 SRAM, 25ns
|
White Electronic Designs
|
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