PART |
Description |
Maker |
E28F128J3A150 |
IC,EEPROM,NOR FLASH,8MX16/16MX8,CMOS,TSSOP,56PIN,PLASTIC
|
Intel Corp
|
HY5V26CF HY5V26CLF |
8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 8M × 16位| 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
Vishay Intertechnology, Inc.
|
HY5DU283222AF-2 HY5DU283222AF-25 HY5DU283222AF-33 |
128M(8Mx16) GDDR SDRAM 128M(4Mx32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
UPD46128512-E10X UPD46128512-E11X UPD46128512-E12X |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
|
TC58128FTI |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
MX25L6465EMI10G MX25L12865EZNI10G |
64/128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MBM29XL12DF-80 MBM29XL12DF MBM29XL12DF-70 E520901 |
From old datasheet system PAGE MODE FLASH MEMORY CMOS 128M BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
HY5DU281622ETP-25 HY5DU281622ETP-26 HY5DU281622ETP |
128M(8Mx16) gDDR SDRAM 8M X 16 DDR DRAM, 0.6 ns, PDSO66 8M X 16 DDR DRAM, 0.55 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
K9F2808U0C |
IC,EEPROM,NAND FLASH,16MX8,CMOS,TSSOP,48PIN,PLASTIC From old datasheet system
|
Samsung
|