| PART |
Description |
Maker |
| ADM230L-ADM241L ADM233L ADM235L ADM236L ADM223 ADM |
Low Power, 5V CMOS RS-232 100kBPS Transceiver with 3 Drivers, 5 Receivers and an Enable Pin
Low Power, 5V CMOS RS-232 100kBPS Transceiver with 2 Drivers/Receivers
Low Power, 5V CMOS RS-232 100kBPS Quad Driver
Low Power, 5V CMOS RS-232 Transceiver with 2 Drivers and 2 Receivers
5V CMOS RS-232 Transceiver with 4 Drivers, 5 Receivers and Shutdown and Enable Pins
Low Power, 5V CMOS RS-232 100kBPS Transceiver with 4 Drivers, 3 Receivers and Shutdown and Enable Pins
Low Power, 5V CMOS RS-232 Transceiver with 5 Drivers, 5 Receivers, Shutdown and Enable Pins. No External Capacitors Required
Low Power, 5V CMOS RS-232 120kBPS Transceiver with 2 Drivers & 2 Receivers. No External Capacitors Required
5 V Powered CMOS RS-232 Driver/Receivers
Low Power, 5V CMOS RS-232 Interface Device with 5 Drivers and a Shutdown Feature
|
Analog Devices
|
| TS27M4AC TS27M4AI TS27M4AM TS27M4BC TS27M4BI TS27M |
PRECISION LOW POWER CMOS CMOS OP-AMPS
PRECISION LOW POWER CMOS QUAD OPERATIONAL AMPLIFIERS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| AD73311 |
Low Cost, Low Power CMOS General Purpose Analog Front End Processor(浣?????浣?????CMOS???妯℃????澶????
|
Analog Devices, Inc.
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| HDCS-1020 HDCS-2020 |
Low Power Color VGA (640x480) CMOS Image Sensor 低功耗色VGA40 × 480）的CMOS图像传感
HDCS-2020 · Low Power Color VGA (640x480) CMOS Image Sensor
HDCS-1020 · Low Power Color CIF (352x288) CMOS Image Sensor
|
Delta Electronics, Inc.
Agilent (Hewlett-Packard)
|
| GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM
85ns; Ultra low power 128K x 16 CMOS SRAM
55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
|
| TS27M2AC TS27M2ACN TS27M2AI TS27M2AM TS27M2BC TS27 |
PRECISION LOW POWER CMOS DUAL OP-AMPS
PRECISION LOW POWER CMOS DUAL OPERATIONAL AMPLIFIERS
|
STMICROELECTRONICS[STMicroelectronics]
|
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AD9833BRM AD9833 EVAL-AD9833EB |
2.5 V to 5.5 V, 25 MHz Low Power CMOS Complete DDS 2.5 V.5 V5 MHz低功耗CMOS完整DDS
2.5 V to 5.5 V, 25 MHz Low Power CMOS Complete DDS 2.5 V.5 V5 MHz低功耗CMOS完整的DDS
2.5 V to 5.5 V/ 25 MHz Low Power CMOS Complete DDS
|
Analog Devices, Inc.
AD[Analog Devices]
|
