| PART |
Description |
Maker |
| BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG |
NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CIL148C CIL148A CIL148B CIL476 CIL768 CIL769 CIL61 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-105
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 60V的五（巴西）总裁| 200mA的一（c）|06
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 45V的五（巴西）总裁| 200mA的一（c）|06
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-106
|
Electronic Theatre Controls, Inc.
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| 2N1890 JAN2N1890S JAN2N1711S JANTX2N1711 |
NPN LOW POWER SILICON TRANSISTOR
NPN Transistor
500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
|
Microsemi Corporation
MICROSEMI CORP-LAWRENCE
|
| BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MPSA05 MMBTA05 MPSA05RA |
NPN General Purpose Amplifier 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN Medium Power Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| KRC886T KRC881T KRC882T KRC883T KRC884T KRC885T KR |
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR
300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
| 2SC2229Y BF594 2SC1815GR 2SC1815O BF596 |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 30MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 50mA的一c）|2
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-92 晶体管|晶体管|叩| 30V的五（巴西）总裁| 25mA电流一（c）|2
|
Lumex, Inc.
Atmel, Corp.
|
| JANS2N3498L JANS2N3498 JANS2N3500L JANS2N3501L JAN |
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
NPN Transistor
500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
|
Microsemi, Corp.
Honeywell International, Inc.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-LAWRENCE
|
| BCX29 BF299 BF298 BFR58 BC312 MH7301 BF294 BC533 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-39
MAX 3000A CPLD 512 MC 208-PQFP
晶体管|晶体管|叩| 160V五（巴西）总裁| 100mA的一c）| TO - 220AB现有
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 晶体管|晶体管|叩| 160V五（巴西）总裁| 100mA的一（c）| TO - 39封装
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | TO-92
|
TE Connectivity, Ltd.
|
| KTC1008 KTC1008GR KTC1008-15 |
EPITAXIAL PLANAR NPN TRANSISTOR
General Purpose Transistor
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
