| PART |
Description |
Maker |
| FS1209DH FS1209BH FS1209MH FS1210BH |
Standard Gate SCRs
600 V, standard SCR
200 V, standard SCR
400 V, standard SCR
|
Fagor
|
| FS0808BI FS0808MI |
600 V, standard SCR
Standard Gate SCRs 标准门可控硅
|
Fagor
CADEKA Microcircuits, LLC
|
| DCP20C60 |
Standard Gate SCR
|
DnI
|
| D2P4M |
Standard Gate SCR
|
DnI
|
| MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
0.8 A, 400 V, SCR, TO-92
0.8 A, 600 V, SCR, TO-92
0.8 A, 200 V, SCR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| N275CH04 N275CH04LOO N275CH04KOO N275CH04HOO N275C |
769.3 A, 400 V, SCR, TO-200AB
5565.65 A, 400 V, SCR
1640.65 A, 600 V, SCR, TO-200AC
36.11 A, 1200 V, SCR, TO-48
2614.05 A, 1400 V, SCR
3799.4 A, 3400 V, SCR
2610.91 A, 2600 V, SCR
133.45 A, 800 V, SCR
4474.5 A, 4200 V, SCR
3925 A, 4500 V, SCR
3925 A, 4400 V, SCR
2692.55 A, 1600 V, SCR
70.65 A, 200 V, SCR, TO-65
3595.3 A, 400 V, SCR
3595.3 A, 200 V, SCR
4003.5 A, 2800 V, SCR
1428.7 A, 1800 V, SCR, TO-200AC
1428.7 A, 1600 V, SCR, TO-200AC
612.3 A, 1600 V, SCR
32.97 A, 1000 V, SCR, TO-48
98.91 A, 1000 V, SCR, TO-65
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92
0.47 A, 300 V, SCR, TO-92
LOW POWER USE PLANAR PASSIVATION TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| DT18F08KDL-A DT18F08KSB-A DT18F08KDB-A DT18F08KEL- |
40 A, 800 V, SCR MODULE-5
100 A, 800 V, SCR
120 A, 1100 V, SCR
120 A, 1200 V, SCR
120 A, 1300 V, SCR
120 A, 1000 V, SCR
|
|
| MP03XXX190-12 MP03XXX190 MP03XXX190-08 MP03XXX190- |
Phase Control Dual SCR, SCR/Diode Modules 相位控制双可控硅，SCR /二极管模
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| VSKT25016PBF VSKT17016PBF |
SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A
|
Vishay Siliconix
|
|
