| PART |
Description |
Maker |
| KMM53632004BK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
| KMM53616000CK |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
|
Samsung Semiconductor
|
| IBM0316809C |
(IBM031xxxxC) 16Mb SDRAM
|
IBM Microelectronics
|
| MT58V1MV18D MT58L512Y36D MT58V512V32D MT58V512V36D |
16Mb SYNCBURST SRAM
|
Micron Technology
|
| R1LV1616R0709 R1LV1616RBG-7S R1LV1616RBG-8S R1LV16 |
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
|
Renesas Electronics Corporation
|
| VG3617801BT-8H |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor Corporation
|
| IS42S16100E-6TL IS42S16100E-6BLI IS42S16100E-6TLI |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| WEDPNF8M722V-1010BC WEDPNF8M722V-1015BC WEDPNF8M72 |
8Mx72 Synchronous DRAM 16Mb Flash Mixed Module Multi-Chip Package
|
WEDC[White Electronic Designs Corporation]
|
| M29W128FL60N6E M29W128FL60N6F M29W128FL70ZA6E M29W |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| AS8SLC512K32PEC-15_ET AS8SLC512K32PEC-15_IT AS8SLC |
16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| M30L0R8000B0 M30L0R8000B0ZAQ M30L0R8000B0ZAQE M30L |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M366S3323AT0 |
32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
