PART |
Description |
Maker |
SST29VE010-200-4I-WHE SST29EE010 SST29EE010_05 SST |
1 Mbit (128K x8) Page-Write EEPROM
|
SST[Silicon Storage Technology, Inc]
|
CY14V101NA-BA25XI CY14V101NA-BA25XIT CY14V101NA-BA |
1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles 128K X 8 NON-VOLATILE SRAM, 25 ns, PBGA48
|
http:// CYPRESS SEMICONDUCTOR CORP
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
CXK77B3641GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位)
|
Sony, Corp.
|
AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B- |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28 Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-VQFN -40 to 85 8K X 8 EEPROM 5V, 150 ns, PDSO28 64K 8K x 8 CMOS E2PROM 8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85 64K EEPROM with 64-Byte Page & Software Data Protection 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection From old datasheet system 64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
CY7C1339G-166BGC CY7C1339G-133AXE CY7C1339G-200BGX |
4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 3.5 ns, PBGA119 4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 4 ns, PQFP100 4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 2.8 ns, PBGA119 4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 2.6 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
M29W128GH70N3E M29W128GL |
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory 128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
|
Numonyx B.V
|
NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics ST Microelectronics
|
CY7C1350G-250BGXC CY7C1350G-166BGXI CY7C1350G-166B |
4-Mbit (128K x 36) Pipelined SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 4 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|