| PART |
Description |
Maker |
| TMC2000 TMC3000NF |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -.2-0.2mT, 1V, SQUARE, SURFACE MOUNT
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -.06-0.06mT, 1V, RECTANGULAR, THROUGH HOLE MOUNT
|
NEC TOKIN CORP
|
| Q65210-D250-W5 FP210D250-22 |
Differential Magnetoresistive Sensor
|
Infineon Technologies AG
|
| FP210D250-22 FP210D25 Q65210-D250-W5 |
From old datasheet system
Differential Magnetoresistive Sensor
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| FP201L100 Q65210-L101 FP201L10 |
Differential Magnetoresistive Sensor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MZCK03P1011/KS35D |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, 4-4mT, 200mA, PA66
|
ITT, Corp.
|
| KMZ11B1 |
Magnetic field sensor MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -25-25mT, RECTANGULAR, SURFACE MOUNT
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MR0A16A MR2A16AYS35 MR2A16AVYS35 MR0A16AYS35 MR1A1 |
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64Kx 16位的3.3V异步磁阻随机存取内存
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64K的x 16位的3.3V异步磁阻随机存取内存
|
飞思卡尔半导体(中国)有限公司
|
| MS-0042 |
Semiconductor Magnetoresistive Element
|
Asahi Kasei Microsystem...
|
| MR4S16AVYS35 MR0A08ACTS35C MR0A08ACYS35 MR0A08AVTS |
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MR2A16A1 |
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
|
Freescale Semiconductor, Inc
|
