PART |
Description |
Maker |
M24758-33C |
Elbow for Panel Termination
|
Glenair, Inc.
|
KGS6N4252BT |
Tactile Switches 6mm×6mm Top Push Surface Mounting Type
|
HOKURIKU ELECTRIC INDUSTRY CO.,LTD
|
MIC5338-4CYMT MIC5339-1.8/1.2YMT MIC5339-1.2/1.0YM |
Dual 300mA μCap LDO in 1.6mm x 1.6mm Thin MLF?
|
Micrel Semiconductor
|
BD6726FU-E2 |
Quiet pre-driver (Speed control function by rotation speed feedback)
|
ROHM
|
WP76761CSEC/E |
7.6mm x 7.6mm SUPER FLUX LED LAMP
|
Kingbright Corporation.
|
IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)7.4A,的Rds(on):0.100Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)7.4A时,RDS(对):0.100Ω))
|
Electronic Theatre Controls, Inc. SEME-LAB Seme LAB
|
LL3303AF100QG TL3303AF100QG LL3303AF160QG TL3303AF |
TACT SWITCHES SMT - 6mm x 6mm
|
E-SWITCH
|
IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))
|
SemeLAB Seme LAB International Rectifier http://
|
IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω)) N-Channel N沟道
|
NXP Semiconductors N.V. TT electronics Semelab Limited Seme LAB
|
SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
F75386M F75386SG |
Dual 隆戮1oC Accuracy Temperature Sensor IC with Fan Speed Control Dual ±1oC Accuracy Temperature Sensor IC with Fan Speed Control
|
Feature Integration Technology Inc.
|
1-1337412-0 1-1337413-0 1-1478213-0 |
TYPE N ELBOW PLUG RG213 TYPE N BKHD JACK RG213 N型BKHD插座RG213
|
Stackpole Electronics, Inc.
|